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BLF884P Datasheet(PDF) 3 Page - Ampleon Netherlands B.V. |
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BLF884P Datasheet(HTML) 3 Page - Ampleon Netherlands B.V. |
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3 / 15 page ![]() BLF884P_BLF884PS#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 3 of 15 BLF884P; BLF884PS UHF power LDMOS transistor 5. Thermal characteristics [1] Rth(j-c) is measured under RF conditions. 6. Characteristics [1] ID is the drain current. [2] Capacitance values without internal matching. Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase =80 C; PL(AV) =70 W [1] 0.22 K/W Table 6. DC characteristics Tj =25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 1.2 mA [1] 104 - - V VGS(th) gate-source threshold voltage VDS =10 V; ID = 120 mA [1] 1.4 1.9 2.4 V IDSS drain leakage current VGS =0V; VDS =50V - - 1.4 A IDSX drain cut-off current VGS =VGS(th) +3.75 V; VDS =10 V -19 - A IGSS gate leakage current VGS =10V; VDS = 0 V - - 140 nA RDS(on) drain-source on-state resistance VGS =VGS(th) +3.75 V; ID =4.25A [1] - 240 - m Ciss input capacitance VGS = 0 V; VDS =50V; f=1MHz [2] - 105 - pF Coss output capacitance VGS = 0 V; VDS =50V; f=1MHz -34 - pF Crss reverse transfer capacitance VGS = 0 V; VDS =50V; f=1MHz -0.7 - pF Table 7. RF characteristics RF characteristics in Ampleon production narrowband test circuit; Tcase =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 2-Tone, class-AB VDS drain-source voltage - 50 - V IDq quiescent drain current [1] -0.65 - A PL(AV) average output power f1 = 860 MHz; f2 =860.1 MHz 150 - - W Gp power gain f1 = 860 MHz; f2 =860.1 MHz 20 21 - dB D drain efficiency f1 = 860 MHz; f2 =860.1 MHz 42 46 - % IMD3 third-order intermodulation distortion f1 = 860 MHz; f2 =860.1 MHz - 32 28 dBc |
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