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BLF884P Datasheet(PDF) 3 Page - Ampleon Netherlands B.V.

Part # BLF884P
Description  UHF power LDMOS transistor
PDF  15 Pages
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Manufacturer  AMPLEON [Ampleon Netherlands B.V.]
Direct Link  https://www.ampleon.com
Logo AMPLEON - Ampleon Netherlands B.V.

BLF884P Datasheet(HTML) 3 Page - Ampleon Netherlands B.V.

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BLF884P_BLF884PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 15
BLF884P; BLF884PS
UHF power LDMOS transistor
5. Thermal characteristics
[1]
Rth(j-c) is measured under RF conditions.
6. Characteristics
[1]
ID is the drain current.
[2]
Capacitance values without internal matching.
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
thermal resistance from junction to case Tcase =80 C; PL(AV) =70 W
[1] 0.22 K/W
Table 6.
DC characteristics
Tj =25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 1.2 mA
[1] 104 -
-
V
VGS(th)
gate-source threshold voltage
VDS =10 V; ID = 120 mA [1] 1.4 1.9
2.4
V
IDSS
drain leakage current
VGS =0V; VDS =50V
-
-
1.4
A
IDSX
drain cut-off current
VGS =VGS(th) +3.75 V;
VDS =10 V
-19
-
A
IGSS
gate leakage current
VGS =10V; VDS = 0 V
-
-
140 nA
RDS(on)
drain-source on-state resistance VGS =VGS(th) +3.75 V;
ID =4.25A
[1] -
240 -
m
Ciss
input capacitance
VGS = 0 V; VDS =50V;
f=1MHz
[2] -
105 -
pF
Coss
output capacitance
VGS = 0 V; VDS =50V;
f=1MHz
-34
-
pF
Crss
reverse transfer capacitance
VGS = 0 V; VDS =50V;
f=1MHz
-0.7
-
pF
Table 7.
RF characteristics
RF characteristics in Ampleon production narrowband test circuit; Tcase =25 C unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
2-Tone, class-AB
VDS
drain-source voltage
-
50
-
V
IDq
quiescent drain current
[1] -0.65 -
A
PL(AV)
average output power
f1 = 860 MHz;
f2 =860.1 MHz
150 -
-
W
Gp
power gain
f1 = 860 MHz;
f2 =860.1 MHz
20
21
-
dB
D
drain efficiency
f1 = 860 MHz;
f2 =860.1 MHz
42
46
-
%
IMD3
third-order intermodulation distortion
f1 = 860 MHz;
f2 =860.1 MHz
-
32 28
dBc



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