BLF884P datasheet(4/15 Pages) AMPLEON

4 / 15 page

BLF884P_BLF884PS#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

4 of 15

BLF884P; BLF884PS

UHF power LDMOS transistor

[1]

Idq for total device

[2]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

6.1 Ruggedness in class-AB operation

The BLF884P and BLF884PS are capable of withstanding a load mismatch corresponding

to VSWR of

 40 : 1 through all phases under the following conditions: VDS =50 V;

f = 860 MHz at rated power.

DVB-T (8k OFDM), class-AB

VDS

drain-source voltage

IDq

quiescent drain current

[1] -0.65 -

PL(AV)

average output power

f = 858 MHz

power gain

f = 858 MHz

D

drain efficiency

f = 858 MHz

IMDshldr

intermodulation distortion shoulder

f = 858 MHz

[2] -

31 27

dBc

PAR

peak-to-average ratio

f = 858 MHz

[3] -8.2

VGS = 0 V; f = 1 MHz.

Fig 1.

Output capacitance as a function of drain-source voltage; typical values per

section

Table 7.

RF characteristics …continued

RF characteristics in Ampleon production narrowband test circuit; Tcase =25 C unless otherwise

specified.

Symbol Parameter

Conditions

Min Typ Max Unit

001aao028

VDS (V)

060

100

150

200

Coss

(pF)

BLF884P Datasheet(PDF) 4 Page - Ampleon Netherlands B.V.

BLF884P Datasheet(HTML) 4 Page - Ampleon Netherlands B.V.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL