4812 datasheet(4/5 Pages) TUOFENG

Part #	4812

Description	N-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

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Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Qg (nC)

Figure 7: Gate-Charge characteristics

100

200

300

400

500

600

700

800

900

1000

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Coss

Crss

0.1

100

0.1

100

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100

µs

10ms

1ms

0.1s

10s

RDS(ON)

limited

TJ(Max)=150°C

TA=25°C

VDS=15V

ID=6.9A

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

RθJA=62.5°C/W

Ton

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150°C

TA=25°C

f=1MHz

VGS=0V

µs

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4812

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