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STGO30H60DLLFBAG Datasheet(PDF) 7 Page - STMicroelectronics |
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STGO30H60DLLFBAG Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() Figure 19. Typical switching times vs collector current GADG240120221007STC 10 2 10 1 0 10 20 30 40 50 60 t (ns) IC (A) tf td(off) 10 VGE = 5 V, TJ = 175 ℃ Figure 20. Typical switching times vs gate resistance GADG240120221008STR 10 3 10 2 10 1 0 10 20 30 40 t (ns) RG (Ω) VGE = 5 V, TJ = 175 ℃ IC = 30 A td(off) tf Figure 21. Maximum transient thermal impedance for IGBT GADG2401202211418ZTH_IGBT 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 tp (s) 0.4 0.1 0.05 duty=0.5 0.2 ton T duty = ton / T RthJC = 0.57 °C/W Single pulse ZthJC (°C/W) 0.3 Figure 22. Maximum transient thermal impedance for diode GADG2401202211419ZTH_diode 10 0 10 -1 10 -2 10 -6 10 -5 10 -4 10 -3 10 -2 tp (s) 0.4 0.05 0.1 0.05 duty=0.5 0.1 Single pulse ZthJC (°C/W) 0.3 0.2 ton T duty = ton / T RthJC = 1.51 °C/W STGO30H60DLLFBAG Electrical characteristics (curves) DS12913 - Rev 4 page 7/15 |
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