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STGO30H60DLLFBAG Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGO30H60DLLFBAG
Description  Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGO30H60DLLFBAG Datasheet(HTML) 1 Page - STMicroelectronics

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TO-LL
TAB
TAB
1
8
8
1
type B
C(TAB)
E(2, 3, 4, 5, 6, 7, 8)
G1CTABE2345678
G(1)
Features
•
AEC-Q101 qualified
•
Maximum junction temperature: TJ = 175 °C
•
Logic level gate drive
•
High-speed switching series
•
Minimized tail current
•
VCE(sat) = 1.6 V (typ.) @ IC = 30 A
•
Low VF soft-recovery co-packaged diode
•
Tight parameter distribution
•
Safer paralleling
•
Low thermal resistance
Applications
•
Automotive injection
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status link
STGO30H60DLLFBAG
Product summary
Order code
STGO30H60DLLFBAG
Marking
GO30H60DLL
Package
TO-LL type B
Packing
Tape and reel
Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series
IGBT in a TO
‑LL package
STGO30H60DLLFBAG
Datasheet
DS12913 - Rev 4 - January 2022
For further information contact your local STMicroelectronics sales office.
www.st.com


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