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STP15810 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP15810 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() This is information on a product in full production. August 2014 DocID024972 Rev 4 1/13 STP15810 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1. Internal schematic diagram Features • 100% avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. TO-220 1 2 3 TAB Order code VDS RDS(on)max ID PTOT STP15810 100 V 0.0042 Ω 110 A 250 W Table 1. Device summary Order code Marking Package Packaging STP15810 15810 TO-220 Tube www.st.com |
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