TIP127 datasheet(1/2 Pages) TUOFENG

Part #	TIP127

Description	PNP Darlington Transistors

PDF	2 Pages

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Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD

■

Features

●

Collector Current Capability ICM=-5A

●

Collector Emitter Voltage VCEO=-100V

●

Medium Power Complementary Silicon Transistors

1

TO-220

2 3

(0.70)

MAX1.47

#1

10.16 ± 0.20

(1.00x45 )

2.54 ± 0.20

0.80 ± 0.10

9.40 ± 0.20

2.76 ± 0.20

0.35 ± 0.10

ø3.18 ± 0.10

2.54TYP

[2.54 ± 0.20 ]

2.54TYP

[2.54 ± 0.20 ]

0.50 +0.10

–0.05

3. Emitter

1. Base

2. Collector

■

Absolute Maximum Ratings Ta = 25℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -1 mA， IE= 0

-100

Collector- emitter breakdown voltage

VCEO

Ic= -30 mA， IB= 0

-100

Emitter - base breakdown voltage

VEBO

IE= -1 mA， IC= 0

-5

Collector-base cut-off current

ICBO

VCB= -100 V , IE= 0

-0.2

Collector- emitter cut-off current

ICEO

VCE= -50 V , IE= 0

-0.5

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-2

IC=-3 A, IB=-12 mA

-2

IC=-5 A, IB=-20 mA

-4

Base - emitter saturation voltage

VBE(sat) IC=-3 A, IB=-12 mA

-1.2

Base-emitter voltage

VBE

VCE=-3V, IC= -3 A

VCE= -3V, IC= -0.5A

1000

VCE= -3V, IC= -3 A

1000

Collector output capacitance

Cob

VCB= -10V, IE=0,f=0.1MHz

200

pF

DC current gain

V

mA

Collector-emitter saturation voltage

VCE(sat)

hFE

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-100

Collector - Emitter Voltage

VCEO

-100

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

ICM

-5

A

Collector Power Dissipation

PC

2

W

Thermal Resistance Junction to Ambient

RθJA

62.5

Thermal Resistance Junction to Case

RθJC

1.92

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

/W

-2.5

PNP Darlington Transistors

TIP127

1

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TIP127 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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