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TIP127A Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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TIP127A Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 2 page  SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD PNP Darlington Transistors 1 ■ Features ● Collector Current Capability ICM=-8A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors 1 TO-220 2 3 (0.70) MAX1.47 #1 10.16 ± 0.20 (1.00x45 ) 2.54 ± 0.20 0.80 ± 0.10 9.40 ± 0.20 2.76 ± 0.20 0.35 ± 0.10 ø3.18 ± 0.10 2.54TYP [2.54 ± 0.20 ] 2.54TYP [2.54 ± 0.20 ] 0.50 +0.10 –0.05 3. Emitter 1. Base 2. Collector ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -1 mA， IE= 0 -100 Collector- emitter breakdown voltage VCEO Ic= -30 mA， IB= 0 -100 Emitter - base breakdown voltage VEBO IE= -1 mA， IC= 0 -5 Collector-base cut-off current ICBO VCB= -100 V , IE= 0 -0.2 Collector- emitter cut-off current ICEO VCE= -50 V , IE= 0 -0.5 Emitter cut-off current IEBO VEB= -5V , IC=0 -2 IC=-3 A, IB=-12 mA -2 IC=-5 A, IB=-20 mA -4 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-12 mA -1.2 Base-emitter voltage VBE VCE=-3V, IC= -3 A VCE= -3V, IC= -0.5A 1000 VCE= -3V, IC= -3 A 1000 Collector output capacitance Cob VCB= -10V, IE=0,f=0.1MHz 200 pF DC current gain V V mA Collector-emitter saturation voltage VCE(sat) hFE Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCEO -100 Emitter - Base Voltage VEBO -5 Collector Current - Continuous ICM -8 A Collector Power Dissipation PC 2 W Thermal Resistance Junction to Ambient RθJA 62.5 Thermal Resistance Junction to Case RθJC 1.92 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ ℃ /W -2.5 TIP127A TIP127A |
Similar Part No. - TIP127A |
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Similar Description - TIP127A |
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