MMBT3904 datasheet(5/10 Pages) NEXPERIA

5 / 10 page

2004 Feb 03

NXP Semiconductors

Product data sheet

NPN switching transistor

MMBT3904

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 30 V

−

IEBO

emitter cut-off current

IC = 0; VEB = 6 V

−

hFE

DC current gain

VCE = 1 V; see Fig.2; note 1

IC = 0.1 mA

−

IC = 1 mA

−

IC = 10 mA

100

300

IC = 50 mA

−

IC = 100 mA

−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 1 mA

−

200

IC = 50 mA; IB = 5 mA

−

300

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 1 mA

650

850

IC = 50 mA; IB = 5 mA

−

950

collector capacitance

IE = Ie = 0; VCB = 5 V; f = 1 MHz

−

emitter capacitance

IC = Ic = 0; VBE = 500 mV;

f = 1 MHz

−

transition frequency

IC = 10 mA; VCE = 20 V;

f = 100 MHz

300

−

MHz

noise figure

IC = 100 µA; VCE = 5 V; RS = 1 kΩ;

f = 10 Hz to 15.7 kHz

−

Switching times (between 10% and 90% levels); see Fig.3

delay time

ICon = 10 mA; IBon = 1 mA;

IBoff = −1 mA

−

rise time

−

storage time

−

200

fall time

−

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