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STL320N4LF8 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STL320N4LF8
Description  N-channel enhancement mode logic level 40 V, 0.8max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL320N4LF8 Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
TC = 25 °C, unless otherwise specified.
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
V
VGS
Gate-source voltage
±20
V
ID(1)
Drain current (continuous) at TC = 25 °C
360
A
Drain current (continuous) at TC = 100 °C
254
IDM(2)(3)
Drain current (pulsed), tP = 10 µs
1440
A
PTOT
Total power dissipation at TC = 25 °C
188
W
IAS
Single pulse avalanche current (pulse width limited by TJ max.)
60
A
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = 60 A, RGmin = 25 Ω)
590
mJ
TJ
Operating junction temperature range
-55 to 175
°C
Tstg
Storage temperature range
1. The value is relevant to RthJC. Current limitations will come from the operative conditions, such as temperature and thermal
resistance of the PCB.
2. Specified by design and evaluated by characterization, not tested in production.
3. Pulse width is limited by safe operating area.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJA(1)
Thermal resistance, junction-to-ambient max. (on 2s2p FR-4 board vertical in still air)
20
°C/W
RthJC
Thermal resistance, junction-to-case max.
0.8
°C/W
1. Defined according to JEDEC standards (JESD51-5, -7).
STL320N4LF8
Electrical ratings
DS13908 - Rev 2
page 2/16



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