Nexperia

BAS16L

High-speed switching diode

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

500

K/W

[1] Device mounted on an FR4 PCB with 60 µm copper strip line.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

715

mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

855

mV

IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

1

V

VF

forward voltage

IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

1.25

V

VR = 25 V; Tamb = 25 °C

-

-

30

nA

VR = 80 V; Tamb = 25 °C

-

-

0.5

µA

VR = 25 V; Tj = 150 °C

-

-

30

µA

IR

reverse current

VR = 80 V; Tj = 150 °C

-

-

50

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

1.5

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

4

ns

VFRM

peak forward recovery

voltage

IF = 10 mA; tr = 20 ns; Tamb = 25 °C

-

-

1.75

V

BAS16L

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

1 October 2022

3 / 9