Nexperia

RB751CS40

Schottky barrier diode

10. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

370

mV

IR

reverse current

VR = 30 V

-

-

0.5

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz

-

2

-

pF

102

10- 1

10- 2

10

1

0

mlc361

0.6

0.8

0.4

0.2

1

VF (V)

IF

(mA)

(1) (2) (3)

(4)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

103

102

10- 1

10- 2

10

1

0

mlc362

20

10

40

30 VR (V)

IR

(µA)

(1)

(2)

(3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

0

10

20

40

30

5

0

4

mlc363

3

2

1

VR (V)

Cd

(pF)

f = 1 MHz; Tamb = 25 °C

Fig. 3. Diode capacitance as a function of reverse voltage; typical values

RB751CS40

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Product data sheet

7 April 2021

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