RB751CS40

Schottky barrier diode

7 April 2021

Product data sheet

1. General description

Planar Schottky barrier diode with an integrated guard ring for stress protection, in a leadless ultra

small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• Low forward voltage

• Low capacitance

• AEC-Q qualified

3. Applications

• Ultra high-speed switching

• Voltage clamping

• Line termination

• Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF

forward current

-

-

120

mA

VRRM

repetitive peak reverse

voltage

-

-

40

V

VF

forward voltage

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

370

mV

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

K

cathode[1]

2

A

anode

2

1

Transparent

top view

DFN1006-2 (SOD882)

sym001

K

A

[1] The marking bar indicates the cathode.