BSD22 datasheet(3/6 Pages) PHILIPS

3 / 6 page

December 1997

Philips Semiconductors

Product speciﬁcation

MOSFET N-channel depletion switching transistor

BSD22

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Note

1. Device mounted on a ceramic subtrate of 8 mm

× 10 mm × 0.7 mm.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed

Drain-source voltage

VDS

max.

Source-drain voltage

VSD

max.

Drain-substrate voltage

VDB

max.

Source-substrate voltage

VSB

max.

Gate-substrate voltage

VGB

max.

± 15

Gate-source voltage

VGS

max.

+ 15

− 40

Drain current (DC)

max.

Total power dissipation up to Tamb =25 °C(1)

Ptot

max.

230

Storage temperature range

Tstg

−65 to + 150

°C

Junction temperature

max.

125

°C

From junction to ambient in free air(1)

Rth j-a

430

K/W

Drain-source breakdown voltage

VGS =VBS = −5 V; IS = 10 nA

V(BR)DSX

min.

Source-drain breakdown voltage

VGD =VBD = −5 V; ID = 10 nA

V(BR)SDX

min.

Drain-substrate breakdown voltage

VGB = 0; ID = 10 nA; open source

V(BR)DBO

min.

Source-substrate breakdown voltage

VGB = 0; IS = 10 nA; open drain

V(BR)SBO

min.

Drain-source leakage current

VGS =VBS = −5 V; VDS = 10 V

IDSoff

typ.

1.0

Source-drain leakage current

VGD =VBD = 5 V; VSD = 10 V

ISDoff

typ.

1.0

Gate-substrate leakage current

VDB =VSB = 0; VGB = ± 15 V

IGBS

max.

Forward transconductance at f = 1 kHz

VDS = 10 V; VSB = 0; ID = 20 mA

gfs

min.

typ.

Gate-source cut-off voltage

VDS = 10 V; VSB =0;

ID =10 µA

−V(P)GS

max.

2.0

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