BSD22 datasheet(4/6 Pages) PHILIPS

Part #	BSD22

Description	MOSFET N-channel depletion switching transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

4 / 6 page

December 1997

Philips Semiconductors

Product speciﬁcation

MOSFET N-channel depletion switching transistor

BSD22

Drain-source ON-resistance

ID = 1 mA; VSB =0;

typ.

max.

Ω

VGS =5 V

RDSon

typ.

max.

Ω

VGS = 10 V

RDSon

Capacitances at f = 1 MHz

VGS =VBS = −5 V; VDS = 10 V

Feed-back capacitance

Crss

typ.

0.6

Input capacitance

Ciss

typ.

1.5

Output capacitance

Coss

typ.

1.0

Switching times (see Fig.3)

VDD = 10 V; Vi = −5 V to + 5 V

ton

typ.

1.0

toff

typ.

5.0

Fig.2 Capacitances model.

Ciss

=Cgs + Cgd + Cgb

Coss =Cgd + Cbd

Crss =Cgd

handbook, halfpage

MBK301

Cgb

Cgd

Cbs

Cbd

Cgs

handbook, full pagewidth

MBK296

INPUT

OUTPUT

90%

10%

90%

10%

90%

10%

toff

ton

Fig.3

Switching times and input and output waveforms; Ri =50 Ω; tr < 0.5 ns; tf < 1.0 ns; tp = 20 ns; δ < 0.01.

age

MBK300

630

Ω

0.1

µF

T.U.T

Ω

VDD

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