Rev. 04, 2023-07-10

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The information in this document is subject to change without notice.

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PTVA104501EH

Thermally-Enhanced High Power RF LDMOS FET

450 W, 50 V, 960 – 1215 MHz

Description

The PTVA104501EH LDMOS FET is designed for use in power amplifier

applications in the 960 to 1215 MHz frequency band. Features include

high gain and thermally-enhanced package with bolt-down flange.

Manufactured with Wolfspeed's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

PTVA104501EH

Package H-33288-2

Features

• Broadband internal input and output matching

• High gain and efficiency

• Integrated ESD protection

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Excellent ruggedness

• Pb-free and RoHS compliant

• Capable of withstanding a 10:1 load mismatch

(all phase angles) at 450 W peak under RF pulse,

128 µS, 10% duty cycle.

15

25

35

45

55

65

15

25

35

45

55

65

28

30

32

34

36

38

40

42

44

PIN (dBm)

Power Sweep, Pulsed RF

VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,

128 µs pulse width, 10% duty cycle

960 MHz

1030 Mhz

1090 MHz

1150 MHz

1215 MHz

Output power

Efficiency

a104501eh_g1

RF Characteristics

Pulsed RF Performance (tested in Wolfspeed test fixture)

VDD = 50 V, IDQ = 200 mA, POUT = 450 W (peak), ƒ1 = 960 MHz, ƒ2 = 1090 MHz, ƒ3 = 1215 MHz, RF pulse 128 µs,

10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

16.5

17.5

—

dB

Drain Efficiency

hD

53

58

—

%

Gain Flatness

DG

—

0.85

1.8

dB

Return Loss

IRL

—

–9.5

–6

dB

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!