Nexperia

S1DR

200 V, 1 A high power density, standard switching time PN-rectifier

S1DR

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Product data sheet

10 January 2018

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8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

200

V

VR

reverse voltage

-

200

V

VRMS

RMS voltage

Tj = 25 °C

-

140

V

IF

forward current

δ = 1 ; Tsp ≤ 135 °C

-

1.4

A

IF(AV)

average forward current δ = 0.5 ; f = 20 kHz; square wave; Tsp ≤

140 °C

-

1

A

IFSM

non-repetitive peak

forward current

tp = 8.3 ms; Tj(init) = 25 °C; single half sine

wave (applied at rated load condition)

-

25

A

[1]

-

735

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

1.19

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

-

170

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[2]

-

-

105

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

[3]

-

-

15

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3] Soldering point of cathode tab.