UPD75P4308GS datasheet(30/61 Pages) RENESAS

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µPD75P4308

Data Sheet U10909EJ2V1DS

8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY

The program memory in the

µPD75P4308 is a 8192 × 8-bit electrically write-enabled one-time PROM. The pins

listed in the table below are used for this one-time PROM’s write/verify operations. Clock input from the X1 pin is used

instead of address input as a method for updating addresses.

Pin name

Function

VPP

Pin (usually VDD) where programming voltage is applied during

program memory write/verify

X1, X2

Clock input pin for address updating during program memory write/

verify. Input the X1 pin’s inverted signal to the X2 pin.

MD0-MD3

Operation mode selection pin for program memory write/verify

D0/P60/KR0-D3/P63/KR3 (lower 4) 8-bit data I/O pin for program memory write/verify

D4/P50-D7/P53 (upper 4)

VDD

Pin where power supply voltage is applied. Power voltage range

for normal operation is 1.8 to 5.5 V. Apply 6.0 V for program

memory write/verify.

Caution Pins not used for program memory write/verify connect to Vss via a pull-down resistor.

8.1 Operation Modes for Program Memory Write/Verify

When +6 V is applied to the

µPD75P4308’s VDD pin and +12.5 V is applied to its VPP pin, program write/verify modes

are in effect. Furthermore, the following detailed operation modes can be specified by setting pins MD0 to MD3 as

shown below.

Operation mode specification

Operation mode

VPP

VDD

MD0

MD1

MD2

MD3

+12.5 V

+6 V

Zero-clear program memory address

Write mode

Verify mode

Program inhibit mode

× : L or H

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