MP6604A

– SIMPLE, DUAL H-BRIDGE DRIVER WITH SEPARATE IN AND EN PINS

MP6604A Rev. 1.1

MonolithicPower.com

6

5/12/2023

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© 2023 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

VIN = 24V, TA = 25°C, unless otherwise noted.

Parameter

Symbol

Condition

Min

Typ

Max

Units

Power Supply

Input voltage

VIN

4.5

45

V

Quiescent current

IQ

nSLEEP is high, no load

2.8

mA

Sleep mode IQ

ISLEEP

nSLEEP is low

0.9

10

µA

Internal MOSFETs

High-side MOSFET (HS-FET) on

resistance

RDS(ON)_HS IOUT = 1A, TJ = 25°C

135

170

mΩ

Low-side MOSFET (LS-FET) on

resistance

RDS(ON)_LS IOUT = 1A, TJ = 25°C

150

185

mΩ

Body diode forward voltage

VF

IOUT = 1A

1.1

V

Control Logic Inputs

Input logic low voltage

VIL

0.8

V

Input logic high voltage

VIH

2

V

Input logic high current

IIN_H

VIN = 5V

-100

+100

µA

Input logic low current

IIN_L

VIN = 0V

-20

+20

µA

Internal pull-down resistance

RPD

Pulled down to GND

100

k

Ω

nFAULT Output (Open-Drain Output)

Output low voltage

VOL

IOUT = 5mA

0.5

V

Output high leakage current

IOH

VOUT = 5V

1

µA

Protection Circuits

VIN under-voltage lockout

(UVLO) rising threshold

VUVLO

4.5

V

VIN UVLO hysteresis

∆VUVLO

300

mV

VIN over-voltage protection

(OVP) threshold

VOVP

45

48

V

Over-current protection (OCP)

threshold

IOCP1

Sink

3

4.5

A

IOCP2

Source

3

4.5

A

OCP deglitch time

tOCP

1

µs

Thermal shutdown threshold

TTSD

165

°C

Thermal shutdown hysteresis

∆TTSD

15

°C

Timing

AINx/BINx high to AOUTx/

BOUTx high delay time

t1

40

360

ns

AINx/BINx low to AOUTx/

BOUTx low delay time

t2

40

360

ns

Output rise time

t3

1

55

ns

Output fall time

t4

1

165

ns

Dead time (DT)

80

ns