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B1D08065F Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR |
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B1D08065F Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR |
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2 / 7 page ![]() SiC Schottky Diode 2 / 7 www.basicsemi.com Maximum Ratings (T C=25°C unless otherwise specified) Thermal Characteristics Symbol Parameter Value Unit Symbol Parameter Test conditions Unit Value V RRM V RSM I F I FSM ∫i 2dt P tot T j T stg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Continuous forward current Non-repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature T C=25°C T C=155°C T C=25°C T C=110°C T C=25°C, tp=10ms T C=25°C, tp=10ms Half sine wave 650 650 60 18 27 8 112 48 -55~175 -55~175 V V A A A2S W °C °C Min. Typ. Max. 1.332 K/W Thermal resistance from junction to case R th(jc) B1D08065F Rev. 1.2 |
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