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B1D08065F Datasheet(PDF) 4 Page - BASIC SEMICONDUCTOR |
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B1D08065F Datasheet(HTML) 4 Page - BASIC SEMICONDUCTOR |
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4 / 7 page ![]() SiC Schottky Diode 4 / 7 www.basicsemi.com Typical Performance Typical forward characteristics Figure 1 Figure 3 Figure 2 Figure 4 Diode forward current as function of temperature, D=duty cycle Typical capacitance as function of reverse voltage, C=f(V R); Tj=25°C; f =1 MHz Typical reverse current as function of reverse voltage B1D08065F 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 175℃ 150℃ 100℃ 25℃ VF (V) -55℃ 200 250 300 350 400 450 500 550 600 650 0.01 0.1 1 10 175℃ 100℃ 25℃ -55℃ 150℃ VR (V) 25 50 75 100 125 150 175 0 20 40 60 80 100 120 D=1 D=0.7 D=0.5 D=0.3 D=0.2 D=0.1 TC (℃) 0.1 1 10 100 1000 0 100 200 300 400 500 VR (V) Rev. 1.2 |
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