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STFU14N80K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STFU14N80K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() TO-220FP ultra narrow leads 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Features Order code VDS RDS(on ) max. ID STFU14N80K5 800 V 0.445 Ω 12 A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STFU14N80K5 Product summary Order code STFU14N80K5 Marking 14N80K5 Package TO-220FP ultra narrow leads Packing Tube N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package STFU14N80K5 Datasheet DS12888 - Rev 1 - January 2019 For further information contact your local STMicroelectronics sales office. www.st.com |
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