2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V

TC = 125 °C(1)

50

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 6 A

0.400

0.445

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

-

620

-

pF

Coss

Output capacitance

-

60

-

pF

Crss

Reverse transfer capacitance

-

0.8

-

pF

Co(tr) (1)

Equivalent capacitance time

related

VDS = 0 to 640 V, VGS = 0 V

-

107

-

pF

Co(er) (2)

Equivalent capacitance

energy related

-

39

-

pF

Rg

Intrinsic gate resistance

f = 1 MHz , ID= 0 A

-

6.5

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 12 A

VGS= 0 to 10 V

(see Figure 15. Test circuit for gate

charge behavior

-

22

-

nC

Qgs

Gate-source charge

-

4.3

-

nC

Qgd

Gate-drain charge

-

16.5

-

nC

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases

from 0 to 80% VDSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases

from 0 to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 400 V, ID =6 A, RG = 4.7 Ω

VGS = 10 V

see ( Figure 14. Test circuit for resistive

load switching times and

Figure 19. Switching time waveform)

-

12.5

-

ns

tr

Rise time

-

8

-

ns

td(off)

Turn-off delay time

-

33

-

ns

tf

Fall time

-

10

-

ns

STFU14N80K5

Electrical characteristics

DS12888 - Rev 1

page 3/12