CC1110-RTR1 datasheet(18/203 Pages) TI

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CC1110

CC1110 PRELIMINARY Datasheet (Rev. 1.01) SWRS033A

Page 18 of 202

7.9

Analog Temperature Sensor

TA=25°C, VDD=3.0V if nothing else stated. Measured on Chipcon’s CC1110 EM reference design.

Parameter

Min

Typ

Max

Unit

Condition/Note

Output voltage at –40

°C

0.660

Output voltage at 0

°C

0.755

Output voltage at +40

°C

0.859

Output voltage at +80

°C

0.958

Temperature coefficient

2.54

mV/

°C

Fitted from –20

°C to +80°C

Error in calculated

temperature, calibrated

°C

From –20

°C to +80°C when using 2.44mV / °C,

after 1-point calibration at room temperature

Current consumption

increase when enabled

0.3

Table 13: Analog Temperature Sensor Parameters

7.10 8-14 bit ADC

TA=25°C, VDD=3.0V if nothing else stated. Measured on Chipcon’s CC1110 EM reference design.

Parameter

Min

Typ

Max

Unit

Condition/Note

Input voltage

AVDD

AVDD is voltage on AVDD pin

External reference voltage

AVDD

AVDD is voltage on AVDD pin

External reference voltage

differential

AVDD

AVDD is voltage on AVDD pin

Number of bits (ENOB)

bits

The ADC is a delta-sigma. Effective resolution

depends on sample rate used.

Differential input signal and reference.

Offset

TBD

LSB

Conversion time

114

µs

Using 26 MHz crystal oscillator

Differential nonlinearity

(DNL)

±0.3

LSB

8-bits setting

Integral nonlinearity (INL)

±0.8

LSB

8-bits setting

SINAD

8-bits setting

(sine input)

10-bits setting

12-bits setting

14-bits setting

Table 14: 8-14 bit ADC Characteristics

CC1110-RTR1 Datasheet(PDF) 18 Page - Texas Instruments

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