| Electronic Components Datasheet Search |
|
BSC059N04LS6 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
BSC059N04LS6 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() BSC059N04LS6 N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 40 -- -- V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2.5 -- 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 15A -- -- 0.12 Ω IDSS Zero Gate Voltage Drain Current VDS= 40V; VGS= 0 -- -- 1 uA IDSS Zero Gate Voltage Drain Current VDS= 40V; VGS= 0; TJ = 125°C -- -- 100 uA IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -- -- ± 100 nA VSD Diode Forward Voltage ISD= 50A; VGS= 0V -- -- 1.0 V PACKAGE OUTLINE (UNIT: MM): |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |