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BSC059N04LS6 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BSC059N04LS6 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  BSC059N04LS6 N-Channel MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 59A@ TC=25℃ ·Drain Source Voltage -VDSS=40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.9mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 59 A IDM Drain Current-Single Pluse 236 A PD Total Dissipation @TC=25℃ 38 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.0 ℃ /W Gate Drain Source D D S S S Pin 1 |
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