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PBYR735X Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PBYR735X
Description  Rectifier diodes schottky barrier
PDF  5 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR735X Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR745X series
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.5
K/W
heatsink
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 7.5 A; Tj = 125˚C
-
0.50
0.59
V
I
F = 15 A; Tj = 125˚C
-
0.62
0.72
V
I
F = 15 A
-
0.78
0.84
V
I
R
Reverse current
V
R = VRRM
-
50
100
µA
V
R = VRRM; Tj = 125 ˚C
-
13
22
mA
C
d
Junction capacitance
f = 1MHz; V
R = 5V; Tj = 25 ˚C to
-
350
-
pF
125 ˚C
August 1996
2
Rev 1.000



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