PBYR735X datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR745X series

schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV));

square current waveform where I

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV));

sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current; I

R = f(VR);

parameter T

Fig.5. Typical junction capacitance; C

d = f(VR);

f = 1 MHz; T

j = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; Z

th j-hs = f(tp).

02468

D = 1.0

0.5

0.2

0.1

PBYR745F

IF(AV) / A

PF / W

150

144.5

139

133.5

128

122.5

117

111.5

106

Ths(max) / C

D =

Vo = 0.419

Rs = 0.015

100

0.1

0.01

IR / mA

VR/ V

PBYR745

75 C

100 C

125 C

150 C

Tj = 50 C

456

a = 1.57

1.9

2.2

2.8

PBYR745

IF(AV) / A

PF / W

Ths(max) / C

150

144.5

139

133.5

128

122.5

Vo = 0.419

Rs = 0.015

100

1000

100

Cd / pF

VR / V

PBYR745

0.2

0.4

0.6

0.8

1.2

1.4

PBYR745

VF / V

IF / A

Tj = 25 C

Tj = 125 C

max

typ

0.1

0.01

10us

1ms

0.1s

10s

tp / s

Zth j-hs (K/W)

August 1996

Rev 1.000

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