APTM120A20DG

www.microsemi.com

1 – 6

S1

G2

G1

S2

0/VBUS

OUT

VBUS

OUT

VBUS

S1

G1

0/VBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

1200

V

50

Continuous Drain Current

37

Pulsed Drain current

200

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

240

m

Ω

Maximum Power Dissipation

1250

W

Avalanche current (repetitive and non repetitive)

12

A

Repetitive Avalanche Energy

30

Single Pulse Avalanche Energy

1300

mJ

Application

•

Zero Current Switching resonant mode

Features

•

-

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Low profile

•

RoHS Compliant

Phase leg

with Series diodes

MOSFET Power Module