APTM120A20DG datasheet(2/6 Pages) MICROSEMI

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APTM120A20DG

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS = 1200V

Tj = 25°C

1.5

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 1000V

Tj = 125°C

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 25A

200

240

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 6mA

IGSS

Gate – Source Leakage Current

VGS = ±30 V, VDS = 0V

±450

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

15.2

Coss

Output Capacitance

2.2

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

0.42

Total gate Charge

600

Qgs

Gate – Source Charge

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 600V

ID = 50A

390

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 800V

ID = 50A

RG =0.8Ω

Eon

Turn-on Switching Energy

2.79

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 15V, VBus = 800V

ID = 50A, RG = 0.8Ω

0.6

Eon

Turn-on Switching Energy

5.6

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 15V, VBus = 800V

ID = 50A, RG = 0.8Ω

0.81

Series diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Repetitive Reverse Voltage

1200

Tj = 25°C

250

IRM

Maximum Reverse Leakage Current

VR=1200V

Tj = 125°C

600

µA

DC Forward Current

Tc = 70°C

120

IF = 120A

2.5

IF = 240A

2.3

Diode Forward Voltage

IF = 120A

Tj = 125°C

1.8

Tj = 25°C

400

trr

Reverse Recovery Time

Tj = 125°C

470

Tj = 25°C

2.4

Qrr

Reverse Recovery Charge

IF = 120A

VR = 800V

di/dt = 400A/µs

Tj = 125°C

µC

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