ISF1294

eq IXTT16N10D2

Depletion Mode MOSFET

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

BVDSX

Drain-Source Breakdown Voltage

VGS= -5V, ID= 0.25mA

100

-

-

V

IDSX

（

off）

Zero Gate Voltage Drain Current

VDS= 100V, VGS= 0V

-

-

5

uA

IGSX

Gate-Body Leakage Current

VGS= ±20V,VDS= 0V

-

-

±

100

nA

VGS(off)

Gate Threshold off Voltage

VDS= 25V, ID= 4mA

-2.0

-

-4.5

V

RDS(on)

Drain-Source On-Resistance

VGS= 0V, ID= 8A

-

-

64

mΩ

VSD

Diode Forward Voltage

ISD= 16A, VGS= -10V

-

-

1.3

V

ID

（

on）

On-State Drain Current

VGS = 0V, VDS = 25V

16

-

-

A

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