| Electronic Components Datasheet Search |
|
IXTT16N10D2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IXTT16N10D2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 2 page ![]() ISF1294 eq IXTT16N10D2 Depletion Mode MOSFET www.iscsemi.com 1 FEATURES · Drain Current -ID ( on) =16A@ TC=25℃ · Drain Source Voltage -VDSX= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 64mΩ(Max)@VGS= 0V APPLICATIONS · Audio Amplifiers · Start-up Circuits · Protection Circuits Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSX Drain-Source Voltage 100 V VGSX Gate-Source Voltage-Continuous ± 20 V PD Total Dissipation @TC=25℃ 830 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.18 ℃ /W |
Similar Part No. - IXTT16N10D2 |
|
Similar Description - IXTT16N10D2 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |