MT4S07

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT4S07

VHF~UHF Band Low Noise Amplifier Applications

• Low Noise Figure: NF = 1.5dB

項目

記号

定格

単位

Collector-base voltage

10

V

Collector-emitter voltage

5

V

Emitter-base voltage

1.5

V

Collector current

25

mA

Base current

10

mA

Collector power dissipation

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3J1C

Weight: 0.012 g (typ.)

Type name

A D

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1

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