MT4S07 datasheet(2/3 Pages) TOSHIBA

Part #	MT4S07

Description	VHF~UHF Band Low Noise Amplifier Applications

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 3 page

MT4S07

2007-11-01

Microwave Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Transition frequency

VCE = 3 V, IC = 10 mA

⎯

GHz

|S21e|

(1)

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

Insertion gain

|S21e|

(2)

VCE = 3 V, IC = 15 mA, f = 2 GHz

7.5

10.5

⎯

NF(1)

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

1.6

Noise figure

NF(2)

VCE = 3 V, IC = 5 mA, f = 2 GHz

⎯

1.5

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 5 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 1 V, IC = 0

⎯

μA

DC current gain

hFE

VCE = 1 V, IC = 5 mA

⎯

140

⎯

Reverse transfer capacitance

Cre

VCB = 1 V, IE = 0, f = 1 MHz (Note)

⎯

0.4

0.85

Note: Cre is measured by 3 terminal method with capacitance bridge.

Caution

This device is sensitive to electrostatic discharge. Please handle with caution

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