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CDC3RL02BYFPR Datasheet(PDF) 4 Page - Texas Instruments |
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CDC3RL02BYFPR Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 23 page ![]() 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range, unless otherwise noted. (1) MIN MAX UNIT VBATT Voltage range(2) –0.3 7 V Voltage range(3) CLK_REQ_1/2, MCLK_IN –0.3 VBATT + 0.3 V VLDO, CLK_OUT_1/2(2) –0.3 VBATT + 0.3 IIK Input clamp current at VBATT, CLK_REQ_1/2, and MCLK_IN VI < 0 –50 mA IO Continuous output current CLK_OUT1/2 ±20 mA Continuous current through GND, VBATT, VLDO ±50 mA TJ Operating virtual junction temperature –40 150 °C TA Operating ambient temperature range –40 85 °C Tstg Storage temperature range –55 150 °C (1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. (2) The input negative-voltage and output voltage ratings can be exceeded if the input and output current ratings are observed. (3) All voltage values are with respect to network ground pin. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 Machine Model 200 (1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500V HBM is possible with the necessary precautions. (2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250V CDM is possible with the necessary precautions. 6.3 Recommended Operating Conditions See (1) MIN MAX UNIT VBATT Input voltage to internal LDO 2.3 5.5 V VI Input voltage MCLK_IN, CLK_REQ1/2 0 1.89 V VO Output voltage CLK_OUT1/2 0 1.8 V VIH High-level input voltage CLK_REQ1/2 1.3 1.89 V VIL Low-level input voltage CLK_REQ1/2 0 0.5 V IOH High-level output current, DC current –8 mA IOL Low-level output current, DC current 8 mA (1) All unused inputs of the device must be held at VCC or GND to verify proper device operation. See the Implications of Slow or Floating CMOS Inputs application note. CDC3RL02 SCHS371H – NOVEMBER 2009 – REVISED OCTOBER 2024 www.ti.com 4 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: CDC3RL02 |
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