1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short

circuited)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

60

A

IF(AV)

Average forward current, δ = 0.5 square wave

40

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

440

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

+175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AB, D2PAK

0.8

°C/W

TO-220FPAB

3.3

Table 3. Static electrical characteristics (anode terminals short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

190

µA

Tj = 125 °C

-

12

24

mA

Tj = 125 °C

VR = 70 V

-

6

12

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 4 A

-

0.380

0.430

V

Tj = 125 °C

-

0.325

0.375

Tj = 25 °C

IF = 10 A

-

0.465

0.525

Tj = 125 °C

-

0.455

0.510

Tj = 25 °C

IF = 20 A

-

0.600

0.675

Tj = 125 °C

-

0.550

0.600

Tj = 125 °C

IF = 40 A

-

0.645

0.705

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.420 x IF(AV) + 0.009 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

FERD40H100S

Characteristics

DS11576 - Rev 2

page 2/14