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L6122 Datasheet(PDF) 2 Page - STMicroelectronics |
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L6122 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage 100 V VCC Supply Voltage 60 V ID Continuous Drain Current @ Tpins =90 °C, POWERDIP @Tcase =90 °C, MULTIWATT 1.5 3 A A IDM (*) Pulsed Drain Current POWERDIP MULTIWAT T 5 8 A A ISD Continuous Source-drain @ Tpins =90 °C, POWERDIP Diode Current @ Tcase =90 °C, MULTIWATT 1.5 3 A A ISDM Pulsed Source Drain Diode Current POWERDIP MULTIWATT 5 8 A A VIN Input Voltage 7 V VEN Enable Voltage 7 V VS Source Voltage – 1 to + 4 V Ptot Total Power Dissipation @ Tpins =90 °C, POWERDIP @Tcase =90 °C, MULTIWATT @Tamb =70 °C, POWERDIP @Tamb =70 °C, MULTIWATT 4.3 20 1.3 2.3 W W W W Tstg,Tj Storage and Junction Temperature Range – 40 to + 150 °C (*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %. NOTE : ID,IDM,ISD,ISDM are given per channel. THERMAL DATA Symbol Parameter POWERDIP14+3+3 MULTIW ATT15 Unit Rth j-pins Thermal Resistance Junction-pins Max. 14 - oC/W Rth j-case Thermal Resistance Junction-case Max. - 3 oC/W Rth j-amb Thermal Resistance Junction-ambient Max. 65 35 oC/W L6122 - L6123 2/9 |
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