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L6122 Datasheet(PDF) 3 Page - STMicroelectronics |
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L6122 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() SWITCHING TIMES RESISTIVE LOAD Figure 1 : Test Circuit. ELECTRICAL CHARACTERISTICS (Tj =25 oC, VCC = 40V, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Supply Voltage 14 48 V ICC Supply Current All VIN =H VEN = Square Wave (200kHz, 50% DC) 9mA IQ Quiescent Current VEN =L 2 3 mA BVDSS Drain Source Breakdown Voltage ID = 1mA VEN =L 100 V IDSS Output Leakage Current VEN =L VDS = 100V VDS = 80V, Tj = 125 °C1 1 mA RDS(on) (*) Static Drain-source on Resistance VCC ≥ 14V, ID = 1.5A - VEN,VIN = H 0.7 Ω VINL,VENL Input Low Voltage - 0.3 0.8 V VINH,VENH Input High Voltage 2 7 V IINL,IENL Input Low Current VIN,VEN = L - 100 µA IINH,IENH Input High Current VIN,VEN =H 10 µA td (on) Turn on Delay Time ID = 1.5A See Test Circuit and Waveforms 300 ns tr Rise Time 100 ns td (off) Turn off Delay Time 400 ns tf Fall Time 100 ns VSD (*) Source Drain Diode Forward Voltage ISD = 1.5A, VEN = L 1.5 V VSD(on) (*) Source Drain Forward Voltage ISD = 1.5A - VIN,VEN = H 1.2 V (*) Pulse test : pulse width = 300 µs, duty cycle = 2 %. L6122 - L6123 3/9 |
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