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H59N10HT Datasheet(PDF) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H59N10HT
Description  100V SGT N-Channel MOSFET
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H59N10HT Datasheet(HTML) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

  H59N10HT Datasheet HTML 1Page - Guangdong Huixin Electronic Technology Co., Ltd. H59N10HT Datasheet HTML 2Page - Guangdong Huixin Electronic Technology Co., Ltd. H59N10HT Datasheet HTML 3Page - Guangdong Huixin Electronic Technology Co., Ltd. H59N10HT Datasheet HTML 4Page - Guangdong Huixin Electronic Technology Co., Ltd. H59N10HT Datasheet HTML 5Page - Guangdong Huixin Electronic Technology Co., Ltd. H59N10HT Datasheet HTML 6Page - Guangdong Huixin Electronic Technology Co., Ltd.  
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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 4 of 6
Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage
Figure 8. Typical Capacitance vs. Drain-to-Source Voltage
Figure 9. Maximum Safe Operating Area
Figure 10. Maximun Drain Current vs. Case Temperature
Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient
0
2
4
6
8
10
0
5
10
15
20
Q
g (nC)
1
10
100
1000
10000
0
20
40
60
80
100
V
DS (V)
C
iss
C
rss
C
oss
0
10
20
30
40
50
60
70
0
25
50
75
100
125
150
175
T
Ambient(℃)
0.001
0.01
0.1
1
1E-05
0.0001
0.001
0.01
0.1
0.3
0.1
0.05
0.03
single pulse
Duty=T
on/T
Peak T
J=TC+PDM.Z
qJC.RqJC
RqJC=1.5℃/W
Duty=0.5
0.3
0.1
0.05
0.03
0.01
Pulse Width (s)
0.0
0.1
1.0
10.0
100.0
1000.0
0.01
0.1
1
10
100
1000
V
DS (V)
10
ms
10ms
1ms
DC
R
DS(ON) limited
T
J(Max)=175°C
T
C=25°C
100
ms
VDS=50V
ID=20A



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