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H59N10HT Datasheet(PDF) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H59N10HT
Description  100V SGT N-Channel MOSFET
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H59N10HT Datasheet(HTML) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 1 of 6
H59N10HT
100V SGT N-Channel MOSFET
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
•
Enhanced Avalanche Ruggedness
•
Lead Free
Applications:
•
Synchronous Rectification in SMPS
•
Hard Switching and High Speed Circuit
• Power Managment
• Load Switch
Ordering Information
Part Number
Package
Marking
Packing
Qty.
H59N10HT
TO-220
H59N10HT
Tube
50 PCS
Absolute Maximun Ratings (Tc= 2 5℃ unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-to-Source Voltage
100
V
VGS
Gate- to- Source Voltage
±20
V
ID
Continuous Drain Current TC=25℃
59
A
Continuous Drain Current TC=100℃
42
IDM
Pulsed Drain Current
150
PD
Power Dissipation
100
W
EAS
Single Pulse Avalanche Engergy
L = 0.5mH, RG = 25 Ω,TC=25℃
80
mJ
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
℃
Thermal Characteristics
Symbol
Parameter
Typ
Max
Unit
RθJC
Thermal Resistance Junction-Case
--
1.5
℃
/ W
RθJA
Thermal Resistance Junction-Ambient
--
60
℃
/ W
VDSS
RDS(ON)(Typ )
ID
100V
12mΩ
59A


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