TP65H015G5WS Datasheet

R07DS1669EU0400 Rev.4.00

Nov 25, 2025

Page 5

2.3

Electrical Specifications – Forward Device

TJ = 25°C unless otherwise stated.

Symbol

Parameter

Test Conditions

Minimum

Typical

Maximum

Unit

VDSS(BL)

Maximum drain-source voltage

VGS = 0V

650

-

-

V

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 2mA

3.3

4

4.8

V

RDS(on)eff

Drain-source on-resistance [1]

VGS = 10V, ID = 60A,

TJ = 25°C

-

15

18

mΩ

VGS = 10V, ID = 60A,

TJ = 150°C

-

27

-

IDSS

Drain-to-source leakage current

VDS = 650V, VGS = 0V,

TJ = 25°C

-

7

70

µA

VDS = 650V, VGS = 0V,

TJ = 150°C

-

50

-

IGSS

Gate-to-source forward leakage current

VGS = 20V

-

-

400

nA

Gate-to-source reverse leakage current

VGS = -20V

-

-

-400

CISS

Input capacitance

VGS = 0V, VDS = 400V,

f = 1MHz

-

5218

-

pF

COSS

Output capacitance

-

307

-

CRSS

Reverse transfer capacitance

-

4.5

-

CO(er)

Output capacitance, energy related [2]

VGS = 0V,

VDS = 0V to 400V

-

476

-

pF

CO(tr)

Output capacitance, time related [3]

-

1026

-

QG

Total gate charge

VDS = 400V, VGS = 0V to

10V, ID = 60A

-

74

-

nC

QGS

Gate-source charge

-

34

-

QGD

Gate-drain charge

-

21

-

QOSS

Output charge

VGS = 0V,

VDS = 0V to 400V

-

430

-

nC

tD(on)

Turn-on delay

VDS = 400V, VGS = 0V to

12V, RG = 15Ω,

ZFB = 120Ω at 100MHz,

ID = 60A (see Figure 15)

-

87

-

ns

tR

Rise time

-

18

-

tD(off)

Turn-off delay

-

123

-

tF

Fall time

-

9.4

-

1.

Dynamic RDS(on),100% tested; see Figure 17 and Figure 18 for conditions.

2.

Equivalent capacitance to give same stored energy from 0V to 400V.

3.

Equivalent capacitance to give same charging time from 0V to 400V.