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TP65H015G5WS Datasheet(PDF) 1 Page - Renesas Technology Corp |
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TP65H015G5WS Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 13 page  Datasheet TP65H015G5WS 650V SuperGaN® FET in TO-247-3 (source tab) R07DS1669EU0400 Rev.4.00 Nov 25, 2025 Page 1 © 2025 Renesas Electronics Description The TP65H015G5WS 650V, 15mΩ gallium nitride GaN FET is a normally-off device using Renesas’s Gen V platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen V SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Benefits ■ Superior normally off architecture with D-mode GaN HEMT ■ Compatible with standard silicon drivers ■ Enhanced noise immunity with a 4V threshold voltage with no negative gate drive required ■ Enables high-efficiency, high power density, and reliable power conversion ■ Facilitates cost-effective GaN adoption reducing system size, weight, and costs Product and Schematic Diagrams TP65H015G5WS TO-247-3 Cascode Schematic Symbol Cascode Device Structure Features ■ Ultra-fast switching Gen V GaN technology ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Reduced crossover loss ■ Negligible Qrr ■ RoHS compliant and Halogen-free packaging Applications ■ AI datacenter and telecom power supplies ■ E-mobility charging ■ PV inverter ■ UPS ■ BESS Specifications VDS (V) 650 VDSS(TR)(V) maximum 725 RDS(on) (mΩ) maximum [1] 18 QOSS (nC) typical 430 QG (nC) typical 74 1. Dynamic RDS(on) (see Figure 17 and Figure 18) |
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