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AP30G10GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP30G10GD
Description  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP30G10GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP30G10GD
30V N+P-Channel Enhancement Mode MOSFET
AP30G10GD REV1.0
永源微電子科技有限公司
Description
The AP30G10GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =32A
RDS(ON) < 42mΩ @ VGS=10V （Type：35mΩ）
VDS = -100V ID =-28A
RDS(ON) < 100mΩ @ VGS=-10V（Type：80mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP30G10GD
TO252-4L
AP30G10GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
100
100
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
32
-28
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
21
-18.1
A
IDM
Pulsed Drain Current2
90
-85
A
EAS
Single Pulse Avalanche Energy3
138
147
mJ
IAS
Avalanche Current
17
33
A
PD@TA=25℃
Total Power Dissipation4
46
46
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.6
℃
/W


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