AP30G10GD

30V N+P-Channel Enhancement Mode MOSFET

AP30G10GD REV1.0

永源微電子科技有限公司

N-Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

107

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.5

2.2

V

RDS(on)

Static Drain-Source on-Resistance

VGS=10V, ID=10A

-

35

42

mΩ

VGS=4.5V, ID=6A

-

39

55

mΩ

Ciss

Input Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

-

1964

-

pF

Coss

Output Capacitance

-

90

-

pF

Crss

Reverse Transfer Capacitance

-

74

-

pF

Qg

Total Gate Charge

VDS=80V, ID=20A,

VGS=4.5V

-

20

-

nC

Qgs

Gate-Source Charge

-

3.1

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

14

-

nC

td(on)

Turn-on Delay Time

VDS=80V, ID=20A,

RG=3.1Ω, VGS=4.5V

-

11

-

ns

tr

Turn-on Rise Time

-

91

-

ns

td(off)

Turn-off Delay Time

-

40

-

ns

tf

Turn-off Fall Time

-

71

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

30

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

80

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=20A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=100A/μs

-

64

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

152

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=80V,VGS=10V,L=0.1mH,IAS=17A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

.