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AP50G04GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP50G04GD
Description  40V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP50G04GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50G04GD
40V N+P-Channel Enhancement Mode MOSFET
AP50G04GD REV1.0
永源微電子科技有限公司
Description
The AP50G04GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS =40V ID =52A
RDS(ON) < 9.0mΩ @ VGS=10V （Type：6.5mΩ）
VDS = -40V ID =-48A
RDS(ON) < 16mΩ @ VGS=-10V （Type：11mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50G04GD
TO-252-4L
AP50G04GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
52
-48
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
41
-38
A
IDM
Pulsed Drain Current2
170
-150
A
EAS
Single Pulse Avalanche Energy3
289
378
mJ
IAS
Avalanche Current
42
-50
A
PD@TC=25℃
Total Power Dissipation4
58
61.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃
/W


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