AP50G04GD

40V N+P-Channel Enhancement Mode MOSFET

AP50G04GD REV1.0

永源微電子科技有限公司

N-Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

44

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.034

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=10A

---

6.5

9.0

mΩ

VGS=4.5V , ID=8A

---

9.0

12

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4.96

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=32V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=10A

---

40

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.6

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=20V , VGS=4.5V , ID=10A

---

18.8

nC

Qgs

Gate-Source Charge

---

4.7

Qgd

Gate-Drain Charge

---

8.2

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V

, RG=3.3Ω

ID=1A

---

14.3

ns

Tr

Rise Time

---

2.6

Td(off)

Turn-Off Delay Time

---

77

Tf

Fall Time

---

4.8

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

2332

pF

Coss

Output Capacitance

---

193

Crss

Reverse Transfer Capacitance

---

138

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

10.5

A

ISM

Pulsed Source Current2,5

---

---

42

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、EAS condition: TJ=25

℃, VDD=32V, VG= 10V, RG=25Ω, L=0.1mH, IAS= 25A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

.