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AP50G06GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP50G06GD
Description  60V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP50G06GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50G06GD
60V N+P-Channel Enhancement Mode MOSFET
AP50G06GD RVE1.0
永源微電子科技有限公司
Description
The AP50G06GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =55A
RDS(ON) < 18mΩ @ VGS=10V （Type：11mΩ）
VDS = -60V ID =-48A
RDS(ON) < 35mΩ @ VGS=-10V （Type：30mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50G06GD
AP50G06GD XX
TO-252-4L
X YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
60
-60
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
42
-38
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
38.5
-37.5
A
IDM
Pulsed Drain Current2
150
-144
A
EAS
Single Pulse Avalanche Energy3
289
378
mJ
IAS
Avalanche Current
42
50
A
PD@TC=25℃
Total Power Dissipation4
46
41.3
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃
/W


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