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AP50G06GD Datasheet(PDF) 5 Page - A POWER MICROELECTRONICS |
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AP50G06GD Datasheet(HTML) 5 Page - A POWER MICROELECTRONICS |
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5 / 10 page ![]() AP50G06GD 60V N+P-Channel Enhancement Mode MOSFET AP50G06GD RVE1.0 永源微電子科技有限公司 Figure 7: Normalized Breakdown Voltage vs Figure 8: Normalized on Resistance vs. Junction Temperature Junction Temperature Figure 9: Maximum Safe Operating Area Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambien |
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