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AP50N06CD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP50N06CD
Description  60V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP50N06CD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50N06CD
60V N-Channel Enhancement Mode MOSFET
AP50N06CD REV1.0
永源微電子科技有限公司
Description
The AP50N06CD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =48A
RDS(ON) <18mΩ @ VGS=10V（Type：14.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50N06CD
TO-252-3L
AP50N06CD XXX YYYY
2500
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
48
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
20
A
IDM
Pulsed Drain Current2
150
A
EAS
Single Pulse Avalanche Energy3
51.2
mJ
IAS
Avalanche Current
25
A
PD@TC=25
℃
Total Power Dissipation4
44.6
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance Junction-Case1
2.1
℃/W


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