AP50N06CD

60V N-Channel Enhancement Mode MOSFET

AP50N06CD REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

65

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.057

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=20A

---

14.5

18

mΩ

VGS=4.5V , ID=10A

---

18

25

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-5.68

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=60V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=60V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=15A

---

50

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.7

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=30V , VGS=4.5V , ID=15A

---

14.5

---

nC

Qgs

Gate-Source Charge

---

5.5

---

Qgd

Gate-Drain Charge

---

4

---

Td(on)

Turn-On Delay Time

VDD=30V , VGS=10V , RG=3.3Ω,

ID=15A

---

12

---

ns

Tr

Rise Time

---

32.8

---

Td(off)

Turn-Off Delay Time

---

17

---

Tf

Fall Time

---

9.5

---

Ciss

Input Capacitance

VDS=30V , VGS=0V , f=1MHz

---

1550

---

pF

Coss

Output Capacitance

---

90

---

Crss

Reverse Transfer Capacitance

---

74

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

50

A

ISM

Pulsed Source Current2,5

---

---

150

A

VSD

Diode Forward Voltage2

VGS=0V , IS=20A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=20A , dI/dt=100A/µs , TJ=25

℃

---

14

---

nS

Qrr

Reverse Recovery Charge

---

9.9

---

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =48V, VG =10V, RG =25Ω, L=0.1mH, IAS =25A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.